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Friday, March 1, 2024

"Excellent" reminiscence that would someday exchange three kinds of storage will get very early prototype — SOT-MRAM is cache, system reminiscence and storage rolled into one



Industrial Expertise Analysis Institute (ITRI) and Taiwan Semiconductor Manufacturing Firm (TSMC) have introduced the creation of a SOT-MRAM (spin-orbit torque magnetic random-access reminiscence) array chip, the results of a joint growth program first introduced in 2022.

Touted as a possible substitute for STT-MRAM (spin-transfer-torque MRAM), the brand new SOT-MRAM might be used for computing in reminiscence architectures and in its place for high-density last-level embedded cache purposes. It requires simply 1% of the working electrical energy consumed by its predecessor and is alleged to be quicker than DRAM.



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